page . 1 stad-may.29.2006 pjd09N03 features ? r ds(on) , v gs @10v,i ds @30a=9m ? r ds(on) , v gs @4.5v,i ds @30a=12m ? advanced trench process technology high density cell design for uitra low on-resistance specially designed for dc/dc converters and motor drivers fully characterized avala nche voltage and current pb free product : 99% sn above can meet rohs environment substance directive request mechanical data case: to-252 molded plastic terminals : solderable per mil-std-202,method 208 marking : 09N03 25v n-channel enhancement mode mosfet maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted ) note: 1. maximum dc current limited by the package 2. surface mounted on fr4 board, t < 10 sec pan jit reserves the right to improve product design,functions and reliability without notice drain source gate to-252 r e t e m a r a pl o b m y st i m i ls t i n u e g a t l o v e c r u o s - n i a r d v s d 5 2v e g a t l o v e c r u o s - e t a g v s g + 0 2v t n e r r u c n i a r d s u o u n i t n o c i d 0 5a t n e r r u c n i a r d d e s l u p ) 1 i m d 0 4 2a n o i t a p i s s i d r e w o p m u m i x a m t a 5 2 = o c t a 5 7 = o c p d 5 4 6 2 w e g n a r e r u t a r e p m e t e g a r o t s d n a n o i t c n u j g n i t a r e p o t j t , g t s 0 5 1 + o t 5 5 - o c e s l u p e l g n i s h t i w y g r e n e e h c n a l a v a h m 5 . 0 = l , v 5 2 = d d v , a 3 2 = d i e s a 0 3 1j m e c n a t s i s e r l a m r e h t e s a c - o t - n o i t c n u j r c j 8 . 2 o w / c ) d e t n u o m b c p ( e c n a t s i s e r l a m r e h t t n e i b m a o t - n o i t c n u j 2 r a j 0 5 o w / c www.datasheet.co.kr datasheet pdf - http://www..net/
page . 2 stad-may.29.2006 pjd09N03 electrical characteristics v dd v out v in r g r l switching test circuit gate charge test circuit v dd v gs r g r l 1ma r e t e m a r a pl o b m y sn o i t i d n o c t s e t. n i m. p y t. x a ms t i n u c i t a t s e g a t l o v n w o d k a e r b e c r u o s - n i a r dv b s s d v s g i , v 0 = d a u 0 5 2 =5 2--v e g a t l o v d l o h s e r h t e t a gv ) h t ( s g v s d v = s g i , d a u 0 5 2 =1-3v e c n a t s i s e r e t a t s - n o e c r u o s - n i a r dr ) n o ( s d v s g i , v 5 . 4 = d a 0 3 =-5 . 90 . 2 1 m ? e c n a t s i s e r e t a t s - n o e c r u o s - n i a r dr ) n o ( s d v s g i , v 0 1 = d a 0 3 =-5 . 60 . 9 t n e r r u c n i a r d e g a t l o v e t a g o r e zi s s d v s d v , v 5 2 = s g v 0 =--1a u e g a k a e l y d o b e t a gi s s g v s g =+ v , v 0 2 s d v 0 =--+ 0 0 1a n e c n a t c u d n o c s n a r t d r a w r o fg s f v s d i , v 0 1 = d a 5 1 =5 2--s c i m a n y d e g r a h c e t a g l a t o tq g v s d i , v 5 1 = d v , a 5 1 = s g v 5 =- 0 . 6 1- c n v s d i , v 5 1 = d a 5 1 = v s g v 0 1 = -5 . 7 2- e g r a h c e c r u o s - e t a gq s g -5 . 3- e g r a h c n i a r d - e t a gq d g -2 . 7- e m i t y a l e d n o - n r u tt ) n o ( d v d d r , v 5 1 = l 5 1 = ? i d v , a 1 = n e g v 0 1 = r g 6 . 3 = ? -0 . 0 10 . 3 1 s n e m i t e s i r n o - n r u tt r r -0 . 1 10 . 4 1 e m i t y a l e d f f o - n r u tt ) f f o ( d -5 35 4 e m i t l l a f f f o - n r u tt f -2 . 1 15 . 5 1 e c n a t i c a p a c t u p n ic s s i v s d v , v 5 1 = s g v 0 = h m 0 . 1 = f z -0 5 2 1- f p e c n a t i c a p a c t u p t u oc s s o -0 4 2- e c n a t i c a p a c r e f s n a r t e s r e v e rc s s r -5 8 1- e d o i d n i a r d - e c r u o s t n e r r u c d r a w r o f e d o i d . x a mi s ---0 3a e g a t l o v d r a w r o f e d o i dv d s i s v , a 0 3 = s g v 0 =-4 9 . 02 . 1v www.datasheet.co.kr datasheet pdf - http://www..net/
page . 3 stad-may.29.2006 pjd09N03 fig. 1-typical forward characteristic fig.1- output characteristic typical characteristics curves (t =25 c,unless otherwise noted) a o fig.2- transfer characteristic fig.3- on resistance vs drain current fig.4- on resistance vs gate to source voltage fig.5- on resistance vs junction temperature 0 20 40 60 80 012345 v ds - drain-to-source voltage (v) i d - drain-to-source current (a) 2.5v v =10v, 6.0v, 5.0v, 4.5v, 4.0v gs 3.5v 3.0v 0 20 40 60 80 1.5 2 2.5 3 3.5 4 4.5 v gs - gate-to-source voltage (v) i d - drain source current (a) t =125 c j o t =25 c j o t =-55 c j o v =10v ds v =10v ds v =10v ds 0 10 20 30 40 50 246810 v gs - gate-to-source voltage (v) t j =25 o c 125 o c t =125 c j o t =25 c j o r - on-resistance (m ) ds(on) i =30a d 0 5 10 15 20 0 20406080 i d - drain current (a) v =10v gs v =4.5v gs r - on-resistance (m ) ds(on) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) - on-resistance(normalized) v =10v i =30a gs d www.datasheet.co.kr datasheet pdf - http://www..net/
page . 4 stad-may.29.2006 pjd09N03 fig.6 - gate charge waveform fig.8 - threshold voltage vs temperature fig.7 - gate charge fig.9 - breakdown voltage vs junction temperature fig.10 - source-drain diode forward voltage qgd qgs qg qsw vgs(th) vgs qg qg(th) 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd - source-to-drain voltage (v) i s - source current (a) v =0v gs t =125 c j o t =25 c j o t =-55 c j o 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) v th - g-s threshold voltage (normalized) i =250ua d 25 26 27 28 29 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) bv dss - breakdown voltage (v) i =250ua d 0 2 4 6 8 10 0 5 10 15 20 25 30 q g -gatecharge(nc) v gs - gate-to-source voltage (v) v =15v i =15a ds d copyright panjit international, inc 2006 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. legal statement www.datasheet.co.kr datasheet pdf - http://www..net/
|
